FRACTIONAL STOICHIOMETRY OF THE GAAS(001)C(4X4) SURFACE - AN INSITU X-RAY-SCATTERING STUDY

被引:142
作者
SAUVAGESIMKIN, M
PINCHAUX, R
MASSIES, J
CALVERIE, P
JEDRECY, N
BONNET, J
ROBINSON, IK
机构
[1] LAB MINERAL CRISTALLOG,F-75252 PARIS,FRANCE
[2] UNIV PIERRE & MARIE CURIE,F-75252 PARIS,FRANCE
[3] LAB PHYS SOLIDE & ENERGIE SOLAIRE,F-06950 VALBONNE,FRANCE
关键词
D O I
10.1103/PhysRevLett.62.563
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:563 / 566
页数:4
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