ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS AT 77 DEGREES K

被引:74
作者
NATHAN, MI
BLUM, SE
BURNS, G
MARINACE, JC
机构
来源
PHYSICAL REVIEW | 1963年 / 132卷 / 04期
关键词
D O I
10.1103/PhysRev.132.1482
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1482 / &
相关论文
共 27 条
[21]  
NATHAN MI, TO BE PUBLISHED
[22]   BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J].
NELSON, DF ;
GERSHENZON, M ;
ASHKIN, A .
APPLIED PHYSICS LETTERS, 1963, 2 (09) :182-184
[23]   TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS [J].
PANKOVE, JI .
PHYSICAL REVIEW LETTERS, 1962, 9 (07) :283-&
[24]  
PANKOVE JI, 1962, B AM PHYS SOC, V7, P88
[25]   SEMICONDUCTOR MASER OF GAAS [J].
QUIST, TM ;
REDIKER, RH ;
KEYES, RJ ;
KRAG, WE ;
LAX, B ;
MCWHORTER, AL ;
ZEIGLER, HJ .
APPLIED PHYSICS LETTERS, 1962, 1 (04) :91-92
[26]  
TURNER WJ, TO BE PUBLISHED
[27]  
WOODS JH, PRIVATE COMMUNICATIO