SMOOTHING EFFECT OF GAAS ALXGA1-XAS SUPERLATTICES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：5
|
作者：
XU, XG
HUANG, BB
REN, HW
JIANG, MH
机构：
[1] Institute of Crystal Materials, National Laboratory of Crystal Materials, Shandong University, Jinan
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 22期
关键词：
D O I：
10.1063/1.111422
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs/Al(x)Ga1-xAs (x=0.5, 0.6, 1.0) superlattices used as buffer layers in high electron mobility transistors and photomultiplier devices can smooth out interface roughness. The mechanism of the smoothing effect has been discussed in detail. The initial stage of nucleation on the substrates has been clearly verified by examining the undulations of a 30 nm GaAs layer sandwiched between the substrate and the superlattice.
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页码：2949 / 2951
页数：3
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