EXPERIMENTAL DENSITY OF STATES OF LIQUID SILICON

被引：15

作者：

HAGUE, CF

SENEMAUD, C

OSTROWIECKI, H

机构：

来源：

JOURNAL OF PHYSICS F-METAL PHYSICS | 1980年 / 10卷 / 10期

关键词：

D O I：

10.1088/0305-4608/10/10/004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L267 / L270

页数：4

共 13 条

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[5]

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