INFRARED SPECTROSCOPY OF DIVACANCY-ASSOCIATED RADIATION-INDUCED ABSORPTION-BANDS IN SILICON

被引：28
作者：
CHEN, CS
CORELLI, JC
机构：
来源：
PHYSICAL REVIEW B | 1972年 / 5卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.5.1505
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1505 / &
相关论文
共 25 条
[1]  
Chen C. S., 1971, Radiation Effects, V9, P75, DOI 10.1080/00337577108242035
[2]  
CHEN CS, 1969, B AM PHYS SOC, V14, P395
[3]  
CHEN CS, 1971, THESIS RENSSELAER PO
[4]   EFFECT OF POLARIZED LIGHT ON 1.8-MU, 3.3-MU, AND 3.9-MU RADIATION-INDUCED ABSORPTION BANDS IN SILICON [J].
CHENG, LJ ;
VAJDA, P .
PHYSICAL REVIEW, 1969, 186 (03) :816-&
[5]   1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].
CHENG, LJ ;
CORELLI, JC ;
CORBETT, JW ;
WATKINS, GD .
PHYSICAL REVIEW, 1966, 152 (02) :761-+
[6]   CHARACTERISTICS OF NEUTRON DAMAGE IN SILICON [J].
CHENG, LJ ;
LORI, J .
PHYSICAL REVIEW, 1968, 171 (03) :856-+
[7]  
CHENG LJ, 1968, RADIATION EFFECTS SE
[8]   STUDY OF DIVACANCY IN IRRADIATED SILICON USING INFRARED SPECTROSCOPY AND INFRARED PHOTOCONDUCTIVITY MEASUREMENTS [J].
CORELLI, JC ;
YOUNG, RC ;
CHEN, CS .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) :128-&
[9]  
DALY DF, 1970, ALBANY INT C RADIATI
[10]   INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J].
FAN, HY ;
RAMDAS, AK .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1127-1134
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