BORON-DIFFUSION IN DEVICE-LIKE B-DOPED A-SIC-H/A-SI-H HETEROJUNCTION

The boron depth profiles in B-doped a-SiC:H/a-Si:H heterojunctions have been measured by nuclear reaction analysis (NRA). The experimental results show that the concentration of boron in the a-Si:H layer strongly depends on the substrate temperature. The boron diffusion from the a-SiC:H layer to the a-Si:H layer during preparation results in a widening of the effective doped area. The diffusion coefficients of boron in the growing a-Si:H films are estimated.