SILICON DONOR-ACCEPTOR PAIR DEFECTS IN GALLIUM-ARSENIDE

被引：20

作者：

BROZEL, MR ^{[1
]}

NEWMAN, RC ^{[1
]}

OZBAY, B ^{[1
]}

机构：

[1] UNIV READING,JJ THOMSON PHYS LAB,READING RG6 2AH,BERKSHIRE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 20期

关键词：

D O I：

10.1088/0022-3719/12/20/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Absorption bands at 393 cm-1 and 464 cm-1 in GaAs are due to the localised vibrational modes (LVMs) of nearest-neighbour (Si Ga-SiAs) defects. A third line at 367 cm-1 has been attributed to this defect but there have been doubts about the assignment. Samples have now been subjected to prolonged 2 meV electron irradiations and subsequent anneals, and it is shown that the strength of the absorption at 367 cm-1 is not correlated with that of the line at 393 cm-1. Thus the defect responsible for the 367 cm-1 line is not the pair centre and the defect is designated (Si-Y). Another grown-in centre (Si-X) gives an LVM line at 369 cm-1 and it is now shown that other silicon impurities do not give rise to detectable infrared absorption.

引用

页码：L785 / L788

页数：4