THEORY OF FARADAY EFFECT IN ANISOTROPIC SEMICONDUCTORS

被引:52
作者
DONOVAN, B
WEBSTER, J
机构
来源
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1962年 / 79卷 / 507期
关键词
D O I
10.1088/0370-1328/79/1/308
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
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页码:46 / &
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共 10 条
[1]   THEORY OF THE GALVANOMAGNETIC EFFECTS IN GERMANIUM [J].
ABELES, B ;
MEIBOOM, S .
PHYSICAL REVIEW, 1954, 95 (01) :31-37
[2]   INFRA-RED FARADAY ROTATION AND FREE CARRIER ABSORPTION IN BI2TE3 [J].
AUSTIN, IG .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (488) :169-179
[3]  
AUSTIN IG, 1959, J ELECTRON CONTR, V6, P271
[4]   FARADAY EFFECT IN NON-DEGENERATE SEMICONDUCTORS [J].
DONOVAN, B ;
WEBSTER, J .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (503) :120-&
[5]   MICROWAVE FARADAY EFFECT IN SILICON AND GERMANIUM [J].
FURDYNA, JK ;
BROERSMA, S .
PHYSICAL REVIEW, 1960, 120 (06) :1995-2003
[6]  
Gurevich L. E., 1959, ZH EKSP TEOR FIZ, V37, P1324
[7]  
GUREVICH LE, 1960, SOV PHYS JETP-USSR, V10, P943
[8]  
Moss TS., 1959, OPTICAL PROPERTIES S
[9]   FARADAY EFFECT IN GERMANIUM AT ROOM TEMPERATURE [J].
RAU, RR ;
CASPARI, ME .
PHYSICAL REVIEW, 1955, 100 (02) :632-639
[10]  
STEPHEN MJ, 1959, J PHYS CHEM SOLIDS, V9, P43