APPLICATION OF TEST METHOD 1019.4 TO NONHARDENED POWER MOSFETS

被引：14

作者：

KHOSROPOUR, P ^{[1
]}

GALLOWAY, KF ^{[1
]}

ZUPAC, D ^{[1
]}

SCHRIMPF, RD ^{[1
]}

CALVEL, P ^{[1
]}

机构：

[1] ALCATEL ESPACE,TOULOUSE,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 03期

关键词：

D O I：

10.1109/23.299798

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The applicability of MIL-STD-883D Method 1019.4 to predicting the low-dose-rate radiation response of non-hardened power MOSFETs has been investigated. Method 1019.4 works well in providing bounds for the threshold-voltage shift. However, it is not intended to provide an estimate of the actual DELTAV(T) due to low-dose-rate irradiation. A modified method is proposed which can yield more information on the threshold-voltage shift at low dose rates for power MOSFETs.

引用

页码：555 / 560

页数：6

共 20 条

[1]

BARNES CE, 1992, IEEE T NUCL SCI, V39, P328, DOI 10.1109/23.277513

[2] TOTAL DOSE HARDNESS ASSURANCE FOR MICROCIRCUITS FOR SPACE ENVIRONMENT [J].