THE MECHANISM OF LOW TEMPERATURE MECHANICAL RELAXATION IN DEFORMED CRYSTALS

被引:117
|
作者
SEEGER, A
DONTH, H
PFAFF, F
机构
来源
关键词
D O I
10.1039/df9572300019
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:19 / 30
页数:12
相关论文
共 50 条
  • [31] Relaxation mechanism of low temperature SiGe/Si(001) buffer layers
    Vescan, L
    Wickenhäuser, S
    SOLID-STATE ELECTRONICS, 2004, 48 (08) : 1279 - 1284
  • [32] MECHANISM OF LOW-FREQUENCY (HIGH-TEMPERATURE) RELAXATION IN ELASTOMERS
    SIDOROVICH, EA
    PAVLOV, GN
    MAREI, AI
    VYSOKOMOLEKULYARNYE SOEDINENIYA SERIYA A, 1974, 16 (04): : 859 - 864
  • [33] RELAXATION MECHANISM OF GE ISLANDS SI(001) AT LOW-TEMPERATURE
    LEGOUES, FK
    TERSOFF, J
    REUTER, MC
    HAMMAR, M
    TROMP, R
    APPLIED PHYSICS LETTERS, 1995, 67 (16) : 2317 - 2319
  • [34] STRUCTURE AND MECHANICAL-PROPERTIES OF AUSTENITIC STEEL DEFORMED BY HYDROPRESSING AT LOW-TEMPERATURE
    TEPLOV, VA
    SHISHKOVA, NV
    YESHCHENKO, RN
    FIZIKA METALLOV I METALLOVEDENIE, 1985, 59 (01): : 206 - 208
  • [35] STRUCTURE AND MECHANICAL PROPERTIES OF AN AUSTENITIC STEEL DEFORMED BY PRESS FORGING AT LOW TEMPERATURE.
    Teplov, V.A.
    Shishkova, N.V.
    Yeshchenko, R.N.
    1600, (59):
  • [36] Kinetic mechanism of the formation of sliding band in deformed crystals
    Maksimov, IL
    Sarafanov, GF
    Nagornykh, SN
    FIZIKA TVERDOGO TELA, 1995, 37 (10): : 3169 - 3178
  • [37] Mechanism of electromagnetic emission in plastically deformed ionic crystals
    Hadjicontis, V.
    Mavromatou, C.
    Antsygina, T. N.
    Chishko, K. A.
    PHYSICAL REVIEW B, 2007, 76 (02)
  • [38] LOW-TEMPERATURE THERMAL-CONDUCTIVITY OF PLASTICALLY DEFORMED NIOBIUM SINGLE-CRYSTALS
    WASSERBACH, W
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 38 (04): : 401 - 431
  • [39] REPLY TO COMMENTS ON LOW TEMPERATURE ELECTRICAL RESISTIVITY OF LATTICE DEFECTS IN DEFORMED TUNGSTEN SINGLE CRYSTALS
    SHUKOVSK.HB
    ROSE, RM
    WULFF, J
    ACTA METALLURGICA, 1967, 15 (02): : 391 - &
  • [40] RELAXATION TIME OF HOLES IN DEFORMED SILICON AT LOW TEMPERATURES
    KUCHEREN.IV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (12): : 1543 - &