LASER PROCESSING OF MATERIALS

被引：14

作者：

NARAYAN, J

机构：

来源：

JOURNAL OF METALS | 1980年 / 32卷 / 06期

关键词：

D O I：

10.1007/BF03354490

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：15 / 21

页数：7

共 28 条

[1] SURFACE NORMALIZATION OF SENSITIZED STAINLESS-STEEL BY LASER SURFACE MELTING [J].

ANTHONY, TR ;

CLINE, HE .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1248-1255

[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[3] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

CELLER, GK ;

POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[4]

GNANAMUTHU DS, 1979, LASER SOLID INTERACT, V50, P173

[5] ANNEALING OF TE-IMPLANTED GAAS BY RUBY-LASER IRRADIATION [J].

GOLOVCHENKO, JA ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :147-149

[6]

KEAR BH, 1978, JUL P SAG C REC ADV

[7] UNIDIRECTIONAL CONTRACTION IN BORON-IMPLANTED LASER-ANNEALED SILICON [J].

LARSON, BC ;

WHITE, CW ;

APPLETON, BR .

APPLIED PHYSICS LETTERS, 1978, 32 (12) :801-803

[8] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J].

LIU, PL ;

YEN, R ;

BLOEMBERGEN, N ;

HODGSON, RT .

APPLIED PHYSICS LETTERS, 1979, 34 (12) :864-866

[9] FORMATION OF A NONCRYSTALLINE PHASE IN ALUMINUM IRRADIATED WITH A PULSED RUBY-LASER [J].

MAZZOLDI, P ;

DELLAMEA, G ;

BATTAGLIN, G ;

MIOTELLO, A ;

SERVIDORI, M ;

BACCI, D ;

JANNITTI, E .

PHYSICAL REVIEW LETTERS, 1980, 44 (02) :88-91

[10] P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER-INDUCED DIFFUSION [J].

NARAYAN, J ;

YOUNG, RT ;

WOOD, RF ;

CHRISTIE, WH .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :338-340

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