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HALL AND DRIFT MOBILITY IN HIGH-RESISTIVITY SINGLE-CRYSTAL SILICON
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STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES
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PHYSICAL REVIEW,
1955, 100 (06)
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[3]
DETERMINATION OF THE IMPURITY CONCENTRATIONS IN A SEMICONDUCTOR FROM HALL COEFFICIENT MEASUREMENTS
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BRITISH JOURNAL OF APPLIED PHYSICS,
1957, 8 (08)
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[5]
ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON
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PHYSICAL REVIEW,
1954, 96 (01)
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[6]
TRANSVERSE HALL AND MAGNETORESISTANCE EFFECTS IN P-TYPE GERMANIUM
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PHYSICAL REVIEW,
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[7]
WILSON AH, 1953, THEORY METALS, P115
[8]
WILSON JM, 1957, RESEARCH, V10, P166