THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF SILICON

被引:109
作者
PUTLEY, EH
MITCHELL, WH
机构
来源
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1958年 / 72卷 / 464期
关键词
D O I
10.1088/0370-1328/72/2/303
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:193 / 200
页数:8
相关论文
共 8 条
[1]   HALL AND DRIFT MOBILITY IN HIGH-RESISTIVITY SINGLE-CRYSTAL SILICON [J].
CRONEMEYER, DC .
PHYSICAL REVIEW, 1957, 105 (02) :522-523
[2]   STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J].
LAX, B ;
MAVROIDES, JG .
PHYSICAL REVIEW, 1955, 100 (06) :1650-1657
[3]   DETERMINATION OF THE IMPURITY CONCENTRATIONS IN A SEMICONDUCTOR FROM HALL COEFFICIENT MEASUREMENTS [J].
LEE, PA .
BRITISH JOURNAL OF APPLIED PHYSICS, 1957, 8 (08) :340-343
[4]   DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J].
LUDWIG, GW ;
WATTERS, RL .
PHYSICAL REVIEW, 1956, 101 (06) :1699-1701
[5]   ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].
MORIN, FJ ;
MAITA, JP .
PHYSICAL REVIEW, 1954, 96 (01) :28-35
[6]   TRANSVERSE HALL AND MAGNETORESISTANCE EFFECTS IN P-TYPE GERMANIUM [J].
WILLARDSON, RK ;
HARMAN, TC ;
BEER, AC .
PHYSICAL REVIEW, 1954, 96 (06) :1512-1518
[7]  
WILSON AH, 1953, THEORY METALS, P115
[8]  
WILSON JM, 1957, RESEARCH, V10, P166