TUNNELING THROUGH ALAS BARRIERS - GAMMA-X TRANSFER CURRENT

被引：71

作者：

LANDHEER, D

LIU, HC

BUCHANAN, M

STONER, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 18期

关键词：

D O I：

10.1063/1.101294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1784 / 1786

页数：3

共 8 条

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[2] RESONANT TUNNELING THROUGH GAAS QUANTUM-WELL ENERGY-LEVELS CONFINED BY ALX GA1-XAS-GAMMA- AND X-POINT BARRIERS [J].

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MCGILL, TC ;

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[3] FUNDAMENTAL OSCILLATIONS UP TO 200 GHZ IN RESONANT TUNNELING DIODES AND NEW ESTIMATES OF THEIR MAXIMUM OSCILLATION FREQUENCY FROM STATIONARY-STATE TUNNELING THEORY [J].

BROWN, ER ;

GOODHUE, WD ;

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JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1519-1529

[4] RESONANT TUNNELING THROUGH SINGLE LAYER HETEROSTRUCTURES [J].

LIU, HC .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :1019-1021

[5] INTERFACE-ROUGHNESS AND ISLAND EFFECTS ON TUNNELING IN QUANTUM WELLS [J].

LIU, HC ;

COON, DD .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :6785-6789

[6] Indirect band-gap tunnelling through a (100) GaAs/AlAs/GaAs heterostructure [J].

Marsh, A. C. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (05) :320-326

[7] RESONANT TUNNELING VIA X-POINT STATES IN ALAS-GAAS-ALAS HETEROSTRUCTURES [J].

MENDEZ, EE ;

WANG, WI ;

CALLEJA, E ;

DASILVA, CETG .

APPLIED PHYSICS LETTERS, 1987, 50 (18) :1263-1265

[8] TUNNELING ESCAPE RATE OF ELECTRONS FROM QUANTUM-WELL IN DOUBLE-BARRIER HETEROSTRUCTURES [J].

TSUCHIYA, M ;

MATSUSUE, T ;

SAKAKI, H .

PHYSICAL REVIEW LETTERS, 1987, 59 (20) :2356-2359

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