INFRARED PHOTOLUMINESCENCE OF INAS EPILAYERS GROWN ON GAAS AND SI SUBSTRATES

被引：47
作者：
GROBER, RD
DREW, HD
CHYI, JI
KALEM, S
MORKOC, H
机构：
[1] LAB PHYS SCI,COLLEGE PK,MD 20740
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 10期
关键词：
D O I：
10.1063/1.343339
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4079 / 4081
页数：3
相关论文
共 13 条
[1]   VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].
ANDERSSON, TG ;
CHEN, ZG ;
KULAKOVSKII, VD ;
UDDIN, A ;
VALLIN, JT .
APPLIED PHYSICS LETTERS, 1987, 51 (10) :752-754
[2]   EFFECT OF LATTICE MISMATCH ON THE ELECTRON MOBILITIES OF INAS GROWN ON GAAS BY MBE [J].
CHANG, CA ;
SERRANO, CM ;
CHANG, LL ;
ESAKI, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (02) :603-605
[3]   MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC INAS/IN0.52 AL0.48 AS QUANTUM WELLS [J].
DEMIGUEL, JL ;
MEYNADIER, MH ;
TAMARGO, MC ;
NAHORY, RE ;
HWANG, DM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :617-619
[4]  
GUSEVA MI, 1975, SOV PHYS SEMICOND+, V9, P591
[5]   1ST STAGES OF THE MBE GROWTH OF INAS ON (001)GAAS [J].
HOUZAY, F ;
GUILLE, C ;
MOISON, JM ;
HENOC, P ;
BARTHE, F .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :67-72
[6]   OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS [J].
JI, G ;
HUANG, D ;
REDDY, UK ;
HENDERSON, TS ;
HOUDRE, R ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3366-3373
[7]   ELECTRICAL-PROPERTIES OF INAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].
KALEM, S ;
CHYI, J ;
LITTON, CW ;
MORKOC, H ;
KAN, SC ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1988, 53 (07) :562-564
[8]  
MADELUNG O, 1982, LANDOLTBORNSTEIN G A, V17
[9]  
MOORADIAN A, 1965, 7TH P INT C PHYS SEM, V4, P39
[10]   LATTICE-RELAXATION OF INAS HETEROEPITAXY ON GAAS [J].
MUNEKATA, H ;
CHANG, LL ;
WORONICK, SC ;
KAO, YH .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :237-242
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