PHOTOLUMINESCENCE IN PURE AND DOPED AMORPHOUS SILICON

被引：46

作者：

NASHASHIBI, TS ^{[1
]}

AUSTIN, IG ^{[1
]}

SEARLE, TM ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT PHYS,SHEFFIELD S3 7RH,YORKSHIRE,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE | 1977年 / 35卷 / 03期

关键词：

D O I：

10.1080/14786437708236013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：831 / 835

页数：5

共 12 条

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[7]

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[8] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

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LECOMBER, PG .

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[9] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

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PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949

[10] PHOTOLUMINESCENCE IN AMORPHOUS AS2S3 [J].

STREET, RA ;

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AUSTIN, IG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (10) :1830-1840

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