DOUBLE AND TRIPLE CHARGE PUMPS WITH MOS DIODES - DYNAMIC-MODELS TO AN OPTIMIZED DESIGN

被引：3
作者：
DICATALDO, G
PALUMBO, G
机构：
[1] Dipartimento Electtrico, Universita' di Catania, Catania, I-95125, Viale Andrea Doria
来源：
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 1994年 / 22卷 / 05期
关键词：
D O I：
10.1002/cta.4490220506
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper the dynamic models of the double and triple charge pumps are extended to circuits in which the diodes are realized with an MOS transistor having a drain-gate contact. In this circuit realization we must take into account the influence of the source-substrate voltage on the threshold voltage V-t. The effects of the source-substrate voltage on the dynamic behaviour are analysed and discussed in detail. Moreover, simple equations allowing one to perform a pencil-and-paper area-efficient optimized design are developed from the two new models. The models obtained are also validated by SPICE simulation of the circuit assuming a typical CMOS 3 mu m process.
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页码：377 / 386
页数：10
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