RATE OF FIELD-IONIZATION FROM S-STATES WITH A QUANTUM DEFECT

被引：15

作者：

CHAUDHURI, S ^{[1
]}

COON, DD ^{[1
]}

DERKITS, GE ^{[1
]}

BANAVAR, JR ^{[1
]}

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

来源：

PHYSICAL REVIEW A | 1981年 / 23卷 / 04期

关键词：

D O I：

10.1103/PhysRevA.23.1657

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：1657 / 1661

页数：5

共 18 条

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[3] NEW CHARGE-STORAGE EFFECT IN SILICON P-I-N-DIODES AT CRYOGENIC TEMPERATURES [J].

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[6] QUANTUM-MECHANICAL ESTIMATES OF THE SPEED OF FIELD-IONIZATION OF SHALLOW IMPURITY LEVELS [J].

CHAUDHURI, S ;

COON, DD ;

DERKITS, GE .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :111-113

[7] FRACTIONAL-CHARGE IMPURITIES IN SEMICONDUCTORS [J].

CHAUDHURI, S ;

COON, DD ;

DERKITS, GE .

PHYSICAL REVIEW LETTERS, 1980, 45 (17) :1374-1378

[8]

DEMKOV YN, 1965, SOV PHYS JETP-USSR, V20, P614

[9]

ERDELYI A, 1953, HIGHER TRANSCENDENTA, P257

[10]

HARRELL E, UNPUBLISHED

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