TEMPERATURE-DEPENDENCE OF ELECTRON EFFECTIVE MASS IN INSB

被引：20

作者：

KOTELES, ES ^{[1
]}

DATARS, WR ^{[1
]}

机构：

[1] MCMASTER UNIV,DEPT PHYS,HAMILTON,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.9.568

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：568 / 571

页数：4

共 21 条

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[13]

LONG D, 1968, ENERGY BANDS SEMICON

[14]

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[15]

NOVIKOVA SI, 1961, SOV PHYS-SOL STATE, V2, P2087

[16]

Roberts V., 1955, J ELECTRONICS, V1, P152

[17] ELASTIC CONSTANTS OF INDIUM ANTIMONIDE FROM 4.2-DEGREES-K TO 300-DEGREES-K [J].

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GARLAND, CW .

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[18]

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[19] THERMAL EXPANSIONS FRON 2 TO 40 DEGREES K OF GE SI AND 4 3-5 COMPOUNDS [J].

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SWENSON, CA .

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[20] TEMPERATURE DEPENDENCE OF BAND-EDGE EFFECTIVE MASSES OF INSB, INAS AND GAAS AS DEDUCED FROM MAGNETOPHONON MAGNETORESISTANCE MEASUREMENTS [J].

STRADLING, RA ;

WOOD, RA .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (05) :L94-+

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