TEMPERATURE-DEPENDENCE OF ELECTRON EFFECTIVE MASS IN INSB

被引:20
作者
KOTELES, ES [1 ]
DATARS, WR [1 ]
机构
[1] MCMASTER UNIV,DEPT PHYS,HAMILTON,ONTARIO,CANADA
来源
PHYSICAL REVIEW B | 1974年 / 9卷 / 02期
关键词
D O I
10.1103/PhysRevB.9.568
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:568 / 571
页数:4
相关论文
共 21 条
[1]   EFFECT OF PRESSURE ON ELECTRON EFFECTIVE MASS IN INSB [J].
AKSELROD, MM ;
DEMCHUK, KM ;
TSIDILKOVSKI, IM ;
BROYDA, EL ;
RODIONOV, KP .
PHYSICA STATUS SOLIDI, 1968, 27 (01) :249-+
[2]   EFFECT OF PRESSURE ON OPTICAL ENERGY GAP IN INDIUM ANTIMONIDE [J].
BRADLEY, CC ;
GEBBIE, HA .
PHYSICS LETTERS, 1965, 16 (02) :109-&
[3]   BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J].
EHRENREICH, H .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2155-&
[4]   TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS [J].
FAN, HY .
PHYSICAL REVIEW, 1951, 82 (06) :900-905
[5]  
Frohlich H., 1950, PHILOS MAG, V41, P221, DOI [10.1080/14786445008521794, DOI 10.1080/14786445008521794]
[6]   THERMAL EXPANSION OF SOME CRYSTALS WITH THE DIAMOND STRUCTURE [J].
GIBBONS, DF .
PHYSICAL REVIEW, 1958, 112 (01) :136-140
[7]  
ITSKEVIC.ES, 1968, FIZ TVERD TELA+, V10, P264
[8]  
ITSKEVICH ES, 1968, FIZ TVERD TELA, V10, P327
[9]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[10]   EFFECT OF PRESSURE ON THE ELECTRICAL CONDUCTIVITY OF INSB [J].
KEYES, RW .
PHYSICAL REVIEW, 1955, 99 (02) :490-495