INFLUENCE OF SIZE QUANTIZATION ON CONDUCTION IN A METAL-OXIDE-SEMICONDUCTOR SYSTEM

被引：0
|
作者：
ROGOVSKA.ET [1 ]
机构：
[1] ODESSA TECHNOL REFRIGERATION IND INST, ODESSA, UKSSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 7卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：811 / 812
页数：2
相关论文
共 50 条
  • [1] INFLUENCE OF SIZE QUANTIZATION ON THE CONDUCTION IN A METAL-OXIDE-SEMICONDUCTOR SYSTEM.
    Rogovskaya, E.T.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (06): : 811 - 812
  • [2] Influence of carrier energy quantization on threshold voltage of metal-oxide-semiconductor transistor
    1600, American Inst of Physics, Woodbury, NY, USA (75):
  • [3] INFLUENCE OF CARRIER ENERGY QUANTIZATION ON THRESHOLD VOLTAGE OF METAL-OXIDE-SEMICONDUCTOR TRANSISTOR
    JANIK, T
    MAJKUSIAK, B
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) : 5186 - 5190
  • [4] SURFACE SUPERCONDUCTIVITY AND THE METAL-OXIDE-SEMICONDUCTOR SYSTEM
    HANKE, W
    KELLY, MJ
    PHYSICAL REVIEW LETTERS, 1980, 45 (14) : 1203 - 1206
  • [5] Modeling of charge quantization and wave function penetration effects in a metal-oxide-semiconductor system with ultrathin gate oxide
    Chim, WK
    Zheng, JX
    Koh, BH
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) : 5273 - 5277
  • [6] A diodelike conduction model for the postbreakdown current in metal-oxide-semiconductor structures
    Miranda, E
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (11) : 6940 - 6942
  • [7] Tunneling spectroscopy of the silicon metal-oxide-semiconductor system
    Lye, WK
    Ma, TP
    Barker, RC
    Hasegawa, E
    Hu, Y
    Kuehne, J
    Frystak, D
    CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY, 1998, 449 : 261 - 265
  • [8] A metal-oxide-semiconductor varactor
    Svelto, F
    Erratico, P
    Manzini, S
    Castello, R
    IEEE ELECTRON DEVICE LETTERS, 1999, 20 (04) : 164 - 166
  • [9] METAL-OXIDE-SEMICONDUCTOR TRANSISTOR
    HILBOURN.RA
    MILES, JF
    ELECTRONIC ENGINEERING, 1965, 37 (445): : 156 - &
  • [10] METAL-OXIDE-SEMICONDUCTOR TUNNELLING
    CLARKE, R
    SHEWCHUN, J
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (06): : 790 - &
12345