TEM ANALYSIS OF LEAD-TELLURIDE FILMS GROWN BY HOT-WALL EPITAXY ON KCL AND BAF2

被引:7
作者
PONGRATZ, P [1 ]
SITTER, H [1 ]
机构
[1] UNIV LINZ,INST EXPTL PHYS,A-4040 LINZ,AUSTRIA
关键词
D O I
10.1016/0022-0248(87)90525-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:73 / 78
页数:6
相关论文
共 22 条
[11]   BOUND DEFECT STATES IN IV-VI-SEMICONDUCTORS [J].
LISCHKA, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (04) :177-189
[12]   USE OF A PHASE-DIAGRAM AS A GUIDE FOR GROWTH OF PBTE FILMS [J].
LOPEZOTERO, A .
APPLIED PHYSICS LETTERS, 1975, 26 (08) :470-472
[13]   HOT WALL EPITAXY [J].
LOPEZOTERO, A .
THIN SOLID FILMS, 1978, 49 (01) :3-57
[14]   GROWTH OF PBTE FILMS UNDER NEAR-EQUILIBRIUM CONDITIONS [J].
LOPEZOTERO, A .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :446-448
[15]  
MATTHEWS JW, 1975, EPITAXIAL GROWTH B, P560
[16]   TEMPERATURE-DEPENDENCE OF THE R0A PRODUCT OF PBTE SCHOTTKY DIODES [J].
MAURER, W .
INFRARED PHYSICS, 1983, 23 (05) :257-260
[17]  
MEYERS JH, 1971, J APPL PHYS, V42, P5578
[18]   THE OBSERVATION OF DISLOCATIONS IN THIN SINGLE CRYSTAL FILMS OF GOLD PREPARED BY EVAPORATION [J].
PASHLEY, DW .
PHILOSOPHICAL MAGAZINE, 1959, 4 (39) :324-335
[19]  
Pongratz P., 1985, I PHYS C SERIES, V76, P313
[20]   PBTE PHOTO-DIODES PREPARED BY THE HOT-WALL EVAPORATION TECHNIQUE [J].
ROGALSKI, A ;
KASZUBA, W ;
LARKOWSKI, W .
THIN SOLID FILMS, 1983, 103 (04) :343-353