CRITICAL CURRENTS IN NbZr SUPERCONDUCTING THIN FILMS

被引：2

作者：

Gambardella, U. ^{[1
,2
]}

Di Gioacchino, D. ^{[1
,2
]}

Boffa, V. ^{[1
]}

Paterno, G. ^{[1
]}

Barbanera, S. ^{[1
,3
]}

Murtas, F. ^{[1
,3
]}

机构：

[1] ENEA CRE Frascati, Via E Fermi 27, I-00044 Rm Frascati, Roma, Italy

[2] INFN LNF, Frascati, Italy

[3] CNR, IESS, I-00156 Rome, Italy

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.233397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nb0.75Zr0.25 thin films have not yet been investigated in all the features that may come from their higher critical temperature compared to other Nb alloys. In this work we present the fabrication of Nb0.75Zr0.25 thin films by sputtering which showed critical temperature as high as 10.5 K. We also present transport critical current measurements on Nb0.75Zr0.25 films whose geometries were photolitographically defined in the mu m range. The measurement were performed as a function both of the temperature and of the magnetic field up to 6 Tesla. The temperature behavior is compared with the Kim-Anderson model, while the magnetic field behavior of the resulting pinning force has been compared with existing models.

引用

页码：1253 / 1256

页数：4

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