共 11 条
Mixed initial-boundary value problem in particle modeling of microelectronic devices
被引:2
作者:
Nedjalkov, M.
[1
]
Vasileska, D.
[2
]
Dimov, I.
[3
,4
]
Arsov, G.
[5
]
机构:
[1] TU Vienna, Inst Microelect, Gusshausstr 27-29 E360, A-1040 Vienna, Austria
[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[3] Bulgarian Acad Sci, Inst Parallel Proc, BU-1113 Sofia, Bulgaria
[4] Univ Reading, ACET Ctr, Reading RG6 6AH, Berks, England
[5] SS Cyril Snd Methodius Univ, Fac Elect Engn & Informat Technol, Skopje 1001, Macedonia
关键词:
Boltzmann equation;
carrier transport in semiconductors;
event biasing;
integral equations;
D O I:
10.1515/MCMA.2007.017
中图分类号:
O21 [概率论与数理统计];
C8 [统计学];
学科分类号:
020208 ;
070103 ;
0714 ;
摘要:
The Boltzmann equation in presence of boundary and initial conditions, which describes the general case of carrier transport in microelectronic devices is analysed in terms of Monte Carlo theory. The classical Ensemble Monte Carlo algorithm which has been devised by merely phenomenological considerations of the initial and boundary carrier contributions is now derived in a formal way. The approach allows to suggest a set of event-biasing algorithms for statistical enhancement as an alternative of the population control technique, which is virtually the only algorithm currently used in particle simulators. The scheme of the self-consistent coupling of Boltzmann and Poisson equation is considered for the case of weighted particles. It is shown that particles survive the successive iteration steps.
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页码:299 / 331
页数:33
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