DISLOCATION-FREE FORMATION OF ARTIFICIAL CAVITIES IN SI SINGLE-CRYSTAL

被引：0
|
作者：
YOSHIHIRO, N
NATSUAKI, N
机构：
[1] Central Research Laboratory, Hitachi Ltd, Kokubunji, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 01期
关键词：
Cavity; Crystalline defect; Epitaxial growth; Experimental study; Si; Trench;
D O I：
10.1143/JJAP.29.1
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Cavities enclosed in silicon single crystals are formed by utilizing epitaxial growth on surfaces with microstructures consisting of parallel walls. The cavities accompany no dislocations and/or stacking faults in the surrounding crystal. Their as-formed cross-sectional shape is thin: the length being about 2 µm as compared with the width of 0.3 µm. The shape can be controllably changed by heat treatment. It becomes slightly fat and cocoon shaped at a temperature as low as 1000°C. The crystal defects are also not observed in the heat-treated samples. © 1990 IOP Publishing Ltd.
引用
收藏
页码：1 / 4
页数：4
相关论文
共 50 条
  • [1] Model of formation and transformation of microdefects in dislocation-free single crystal of Si
    Talanin, I.E.
    Talanin, V.I.
    Levinzon, D.I.
    Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya, 2002, (03): : 69 - 74
  • [2] About the simulation of primary grown-in microdefects in dislocation-free silicon single-crystal formation
    Talanin, V. I.
    Talanin, I. E.
    Voronin, A. A.
    CANADIAN JOURNAL OF PHYSICS, 2007, 85 (12) : 1459 - 1471
  • [3] THE OBSERVATION OF THE DISLOCATION-FREE ZONE AHEAD OF THE CRACK TIP IN BULK ALUMINUM SINGLE-CRYSTAL
    WANG, XH
    XU, YB
    WANG, ZG
    HA, KF
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 104 (02): : K79 - &
  • [4] Origins of size effects in initially dislocation-free single-crystal silver micro- and nanocubes
    Griesbach, Claire
    Jeon, Seog-Jin
    Rojas, David Funes
    Ponga, Mauricio
    Yazdi, Sadegh
    Pathak, Siddhartha
    Mara, Nathan
    Thomas, Edwin L.
    Thevamaran, Ramathasan
    ACTA MATERIALIA, 2021, 214 (214)
  • [5] Growth of dislocation-free ZnSe single crystal by CVT method
    Fujiwara, S
    Namikawa, Y
    Irikura, M
    Matsumoto, K
    Kotani, T
    Nakamura, T
    JOURNAL OF CRYSTAL GROWTH, 2000, 219 (04) : 353 - 360
  • [6] Dislocation-Free SiGe/Si Heterostructures
    Montalenti, Francesco
    Rovaris, Fabrizio
    Bergamaschini, Roberto
    Miglio, Leo
    Salvalaglio, Marco
    Isella, Giovanni
    Isa, Fabio
    von Kanel, Hans
    CRYSTALS, 2018, 8 (06):
  • [7] ON THE FORMATION OF VACANCY MICRODEFECTS IN DISLOCATION-FREE SILICON SINGLE CRYSTALS
    Talanin, V. I.
    Talanin, I. E.
    UKRAINIAN JOURNAL OF PHYSICS, 2006, 51 (11-12): : 1108 - 1112
  • [8] Optical microprism cavities based on dislocation-free GaN
    Hjort, Filip
    Khalilian, Maryam
    Bengtsson, Joergen
    Bengths, Marcus
    Gustavsson, Johan
    Gustafsson, Anders
    Samuelson, Lars
    Haglund, Asa
    APPLIED PHYSICS LETTERS, 2020, 117 (23)
  • [9] X-RAY TOPOGRAPHIC STUDY OF DISLOCATION-FREE NIOBIUM SINGLE-CRYSTAL DEFORMED AT 180-K
    NARAMOTO, H
    SCRIPTA METALLURGICA, 1978, 12 (11): : 1027 - 1030
  • [10] Modeling of Defect Formation Processes in Dislocation-Free Silicon Single Crystals
    Talanin, V. I.
    Talanin, I. E.
    CRYSTALLOGRAPHY REPORTS, 2010, 55 (04) : 632 - 637
12345