GROWTH MECHANISMS AND DIFFUSION IN MULTINARY AND MULTILAYER CHALCOPYRITE THIN-FILMS

被引：41
作者：
KLENK, R
WALTER, T
SCHMID, D
SCHOCK, HW
机构：
[1] Universitaat Stuttgart, Institut fuur Physikalische Elektronik, Stuttgart
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷
关键词：
CU(CU; GA)(S; SE)(2); THIN FILMS; MULTILAYERS; PHOTOLUMINESCENCE; DIFFUSION; FILM GROWTH;
D O I：
10.7567/JJAPS.32S3.57
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multisource physical vapor deposition does not only provide the possibility to grow homogeneous multinary films but can also act as a tool for analyzing the growth process and for the interactions of different phases. The present level of knowledge about growth interfaces is reported. Different approaches for studying the growth of films are described in this contribution namely growth of films with excess Cu, CuInSe2/CuGaSe2 multilayers and growth of CuIn(Se, S)2 at different Cu/In ratios.
引用
收藏
页码：57 / 61
页数：5
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