HIGH-TEMPERATURE JOSEPHSON DEVICES

被引：8
作者：
BRAGINSKI, AI
机构：
[1] Institut für Schicht und Ionentechnik (ISI), Forschungszentrum Jülich (KFA), Postfach 1913
来源：
PHYSICA C | 1991年 / 185卷
关键词：
D O I：
10.1016/0921-4534(91)92005-V
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Several types of controllable and potentially useful high-temperature Josephson devices with SNS-type characteristics have recently emerged. The main alternatives are various types of artificially nucleated grain-boundary junctions and junctions with various artificial barriers: noble-metal, heteroepitaxial semiconducting perovskite or altered native oxide. Planar SNS or SS'S weak links may also be viable. Operation at 77K is feasible.
引用
收藏
页码：391 / 400
页数：10
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