GROWTH OF DIAMOND FILMS BY MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION

被引：0

作者：

GAO, KL ^{[1
]}

WANG, CL ^{[1
]}

ZHAN, RJ ^{[1
]}

PENG, DK ^{[1
]}

MENG, GY ^{[1
]}

XIANG, ZL ^{[1
]}

机构：

[1] UNIV SCI & TECHNOL CHINA,DEPT MAT SCI & ENGN,HEFEI 230026,PEOPLES R CHINA

来源：

CHINESE PHYSICS LETTERS | 1991年 / 8卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Diamond thin films were produced by microwave plasma chemical vapor deposition. The deposit is identified by X-ray diffraction, Raman spectroscopy and Scanning electron microscopy. During the course of diamond growth, the characteristics of the plasma have been measured by means of the Langmuir double probe and emission spectrometer.

引用

页码：348 / 351

页数：4