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STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
被引:208
作者
:
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
GOMYO, A
[
1
]
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KOBAYASHI, K
[
1
]
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KAWATA, S
[
1
]
HINO, I
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
HINO, I
[
1
]
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
SUZUKI, T
[
1
]
YUASA, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
YUASA, T
[
1
]
机构
:
[1]
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1986年
/ 77卷
/ 1-3期
关键词
:
D O I
:
10.1016/0022-0248(86)90325-8
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:367 / 373
页数:7
相关论文
共 24 条
[1]
MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS
[J].
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
ASAHI, H
;
KAWAMURA, Y
论文数:
0
引用数:
0
h-index:
0
KAWAMURA, Y
;
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(07)
:4928
-4931
[2]
GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES
[J].
ASAI, H
论文数:
0
引用数:
0
h-index:
0
ASAI, H
;
OE, K
论文数:
0
引用数:
0
h-index:
0
OE, K
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
:6849
-6851
[3]
RAMAN DETECTION OF PHONON-PHONON COUPLING IN GAXIN1-XP
[J].
BESERMAN, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE
BESERMAN, R
;
HIRLIMANN, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE
HIRLIMANN, C
;
BALKANSKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE
BALKANSKI, M
;
CHEVALLIER, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE
CHEVALLIER, J
.
SOLID STATE COMMUNICATIONS,
1976,
20
(05)
:485
-488
[4]
GAAS1-XSBX GROWTH BY OMVPE
[J].
CHERNG, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
CHERNG, MJ
;
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
COHEN, RM
;
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
.
JOURNAL OF ELECTRONIC MATERIALS,
1984,
13
(05)
:799
-813
[5]
COATES GE, 1956, ORGANOMETALLIC COMPO, P84
[6]
MOCVD GROWTH OF (ALXGA1-X)YIN1-YP AND DOUBLE HETEROSTRUCTURES FOR VISIBLE-LIGHT LASERS
[J].
HINO, I
论文数:
0
引用数:
0
h-index:
0
HINO, I
;
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
SUZUKI, T
.
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
:483
-489
[7]
ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
[J].
HINO, I
论文数:
0
引用数:
0
h-index:
0
HINO, I
;
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
GOMYO, A
;
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, K
;
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
SUZUKI, T
;
NISHIDA, K
论文数:
0
引用数:
0
h-index:
0
NISHIDA, K
.
APPLIED PHYSICS LETTERS,
1983,
43
(11)
:987
-989
[8]
OMVPE GROWTH OF GAINP
[J].
HSU, CC
论文数:
0
引用数:
0
h-index:
0
HSU, CC
;
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
COHEN, RM
;
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
.
JOURNAL OF CRYSTAL GROWTH,
1983,
62
(03)
:648
-650
[9]
ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP MESA STRIPE LASER
[J].
IKEDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp, Yokohama, Jpn, Sony Corp, Yokohama, Jpn
IKEDA, M
;
NAKANO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp, Yokohama, Jpn, Sony Corp, Yokohama, Jpn
NAKANO, K
;
MORI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp, Yokohama, Jpn, Sony Corp, Yokohama, Jpn
MORI, Y
;
KANEKO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp, Yokohama, Jpn, Sony Corp, Yokohama, Jpn
KANEKO, K
;
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp, Yokohama, Jpn, Sony Corp, Yokohama, Jpn
WATANABE, N
.
APPLIED PHYSICS LETTERS,
1986,
48
(02)
:89
-91
[10]
ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
[J].
ISHIKAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn
ISHIKAWA, M
;
OHBA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn
OHBA, Y
;
SUGAWARA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn
SUGAWARA, H
;
YAMAMOTO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn
YAMAMOTO, M
;
NAKANISI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn
NAKANISI, T
.
APPLIED PHYSICS LETTERS,
1986,
48
(03)
:207
-208
←
1
2
3
→
共 24 条
[1]
MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS
[J].
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
ASAHI, H
;
KAWAMURA, Y
论文数:
0
引用数:
0
h-index:
0
KAWAMURA, Y
;
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(07)
:4928
-4931
[2]
GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES
[J].
ASAI, H
论文数:
0
引用数:
0
h-index:
0
ASAI, H
;
OE, K
论文数:
0
引用数:
0
h-index:
0
OE, K
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
:6849
-6851
[3]
RAMAN DETECTION OF PHONON-PHONON COUPLING IN GAXIN1-XP
[J].
BESERMAN, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE
BESERMAN, R
;
HIRLIMANN, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE
HIRLIMANN, C
;
BALKANSKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE
BALKANSKI, M
;
CHEVALLIER, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE
CHEVALLIER, J
.
SOLID STATE COMMUNICATIONS,
1976,
20
(05)
:485
-488
[4]
GAAS1-XSBX GROWTH BY OMVPE
[J].
CHERNG, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
CHERNG, MJ
;
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
COHEN, RM
;
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
.
JOURNAL OF ELECTRONIC MATERIALS,
1984,
13
(05)
:799
-813
[5]
COATES GE, 1956, ORGANOMETALLIC COMPO, P84
[6]
MOCVD GROWTH OF (ALXGA1-X)YIN1-YP AND DOUBLE HETEROSTRUCTURES FOR VISIBLE-LIGHT LASERS
[J].
HINO, I
论文数:
0
引用数:
0
h-index:
0
HINO, I
;
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
SUZUKI, T
.
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
:483
-489
[7]
ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
[J].
HINO, I
论文数:
0
引用数:
0
h-index:
0
HINO, I
;
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
GOMYO, A
;
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, K
;
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
SUZUKI, T
;
NISHIDA, K
论文数:
0
引用数:
0
h-index:
0
NISHIDA, K
.
APPLIED PHYSICS LETTERS,
1983,
43
(11)
:987
-989
[8]
OMVPE GROWTH OF GAINP
[J].
HSU, CC
论文数:
0
引用数:
0
h-index:
0
HSU, CC
;
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
COHEN, RM
;
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
.
JOURNAL OF CRYSTAL GROWTH,
1983,
62
(03)
:648
-650
[9]
ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP MESA STRIPE LASER
[J].
IKEDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp, Yokohama, Jpn, Sony Corp, Yokohama, Jpn
IKEDA, M
;
NAKANO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp, Yokohama, Jpn, Sony Corp, Yokohama, Jpn
NAKANO, K
;
MORI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp, Yokohama, Jpn, Sony Corp, Yokohama, Jpn
MORI, Y
;
KANEKO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp, Yokohama, Jpn, Sony Corp, Yokohama, Jpn
KANEKO, K
;
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp, Yokohama, Jpn, Sony Corp, Yokohama, Jpn
WATANABE, N
.
APPLIED PHYSICS LETTERS,
1986,
48
(02)
:89
-91
[10]
ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
[J].
ISHIKAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn
ISHIKAWA, M
;
OHBA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn
OHBA, Y
;
SUGAWARA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn
SUGAWARA, H
;
YAMAMOTO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn
YAMAMOTO, M
;
NAKANISI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn
NAKANISI, T
.
APPLIED PHYSICS LETTERS,
1986,
48
(03)
:207
-208
←
1
2
3
→