STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE

被引:208
作者
GOMYO, A [1 ]
KOBAYASHI, K [1 ]
KAWATA, S [1 ]
HINO, I [1 ]
SUZUKI, T [1 ]
YUASA, T [1 ]
机构
[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
关键词
D O I
10.1016/0022-0248(86)90325-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:367 / 373
页数:7
相关论文
共 24 条
[1]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS [J].
ASAHI, H ;
KAWAMURA, Y ;
NAGAI, H .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4928-4931
[2]   GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES [J].
ASAI, H ;
OE, K .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6849-6851
[3]   RAMAN DETECTION OF PHONON-PHONON COUPLING IN GAXIN1-XP [J].
BESERMAN, R ;
HIRLIMANN, C ;
BALKANSKI, M ;
CHEVALLIER, J .
SOLID STATE COMMUNICATIONS, 1976, 20 (05) :485-488
[4]   GAAS1-XSBX GROWTH BY OMVPE [J].
CHERNG, MJ ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (05) :799-813
[5]  
COATES GE, 1956, ORGANOMETALLIC COMPO, P84
[6]   MOCVD GROWTH OF (ALXGA1-X)YIN1-YP AND DOUBLE HETEROSTRUCTURES FOR VISIBLE-LIGHT LASERS [J].
HINO, I ;
SUZUKI, T .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :483-489
[7]   ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
HINO, I ;
GOMYO, A ;
KOBAYASHI, K ;
SUZUKI, T ;
NISHIDA, K .
APPLIED PHYSICS LETTERS, 1983, 43 (11) :987-989
[8]   OMVPE GROWTH OF GAINP [J].
HSU, CC ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) :648-650
[9]   ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP MESA STRIPE LASER [J].
IKEDA, M ;
NAKANO, K ;
MORI, Y ;
KANEKO, K ;
WATANABE, N .
APPLIED PHYSICS LETTERS, 1986, 48 (02) :89-91
[10]   ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
ISHIKAWA, M ;
OHBA, Y ;
SUGAWARA, H ;
YAMAMOTO, M ;
NAKANISI, T .
APPLIED PHYSICS LETTERS, 1986, 48 (03) :207-208