CARRIER NUMBER FLUCTUATION MODEL OF 1/F NOISE IN A SEMICONDUCTOR-DEVICE

[1] 1/F NOISE IS NO SURFACE EFFECT [J]. PHYSICS LETTERS A, 1969, A 29 (03) : 139 - &

[2] CHARACTERIZATION OF LOW 1/F NOISE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 887 - +

[3] MCWHORTER AL, 1955, 1 F NOISE RELATED SU, V80

[4] ENTRANCE CHANNEL EFFECTS BY POPULATING RESONANCES IN THE AL-26, SI-29, AND SI-30 SYSTEMS [J]. PHYSICAL REVIEW C, 1982, 25 (01): : 313 - 330

[5] SPECTRAL DENSITY DUE TO THE FLUCTUATION OF THE TOTAL NUMBER OF CARRIERS IN A SEMICONDUCTOR [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 318 - 321

[6] SUH CH, 1981, IEEE T ELECTRON DEV, V28, P1555, DOI 10.1109/T-ED.1981.20646

[7] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508

[8] SZE SM, 1981, PHYSICS SEMICONDUCTO, P329

[9] Vandamme L. K. J., 1978, Noise in physical systems, P152

[10] SCANNING ELECTRON-MICROSCOPE MEASUREMENTS ON SHORT CHANNEL MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (04) : 345 - &

[1] 1/F NOISE IS NO SURFACE EFFECT [J]. PHYSICS LETTERS A, 1969, A 29 (03) : 139 - &

[2] CHARACTERIZATION OF LOW 1/F NOISE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 887 - +

[3] MCWHORTER AL, 1955, 1 F NOISE RELATED SU, V80

[4] ENTRANCE CHANNEL EFFECTS BY POPULATING RESONANCES IN THE AL-26, SI-29, AND SI-30 SYSTEMS [J]. PHYSICAL REVIEW C, 1982, 25 (01): : 313 - 330

[5] SPECTRAL DENSITY DUE TO THE FLUCTUATION OF THE TOTAL NUMBER OF CARRIERS IN A SEMICONDUCTOR [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 318 - 321

[6] SUH CH, 1981, IEEE T ELECTRON DEV, V28, P1555, DOI 10.1109/T-ED.1981.20646

[7] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508

[8] SZE SM, 1981, PHYSICS SEMICONDUCTO, P329

[9] Vandamme L. K. J., 1978, Noise in physical systems, P152

[10] SCANNING ELECTRON-MICROSCOPE MEASUREMENTS ON SHORT CHANNEL MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (04) : 345 - &