SOS MOSFET TWO-DIMENSIONAL ANALYSIS

被引：4

作者：

FUKUMA, M ^{[1
]}

OHNO, Y ^{[1
]}

OKUTO, Y ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,ULTRA LSI RES LAB,TAKATSU KU,KAWASAKI 211,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 03期

关键词：

D O I：

10.1109/T-ED.1982.20716

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：410 / 413

页数：4

相关论文

共 9 条

[1] SUB-THRESHOLD BEHAVIOR OF SOS MOSTS
DARWISH, MY
ROULET, ME
SCHWOB, PK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 885 - 889
[2] THRESHOLD VOLTAGE FROM NUMERICAL SOLUTION OF 2-DIMENSIONAL MOS-TRANSISTOR
DELAMONEDA, FH
[J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1973, CT20 (06): : 666 - 673
[3] 2-DIMENSIONAL MODELING OF SOS TRANSISTORS
FICHTNER, W
[J]. IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 (02): : 47 - 51
[4] ANALYSIS OF SHORT-CHANNEL MOSFETS WITH FIELD-DEPENDENT CARRIER-DRIFT MOBILITY
FUKUMA, M
OKUTO, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2109 - 2114
[5] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS
GUMMEL, HK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) : 455 - &
[6] KENNEDY DP, 1973, IBM J RES DEV, V17, P2
[7] 2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR
MOCK, MS
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 601 - 609
[8] OHNO Y, UNPUB INFLUENCE SI S
[9] Preuss E., 1978, Seventh European Solid State Device Research Conference (invited papers), P7