RELIABILITY OF THE ELECTRICAL-PROPERTIES OF THE BF2+ ION-IMPLANTED POLYCRYSTALLINE DIAMOND FILM

被引：2
作者：
LEE, SL
LIN, SJ
HWANG, J
机构：
[1] Department of Materials Science and Engineering, National Tsing Hua University, Hsin-Chu
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 04期
关键词：
D O I：
10.1063/1.109993
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The resistance of the BF2+ ion implanted polycrystalline diamond film drifted higher with time when the diamond film was exposed in air. The reliable resistance of the implanted diamond film could be obtained after the heat treatment at high temperature under vacuum. Temperature dependence of the reliable resistance of the BF2+ ion implanted diamond film indicated two activation energies within the temperature range from room temperature to 400-degrees-C. The effect of gas exposure on the resistance of the implanted diamond film was discussed.
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收藏
页码：524 / 526
页数：3
相关论文
共 14 条
[1]   EFFECTIVE P-TYPE DOPING OF DIAMOND BY BORON ION-IMPLANTATION [J].
BRAUNSTEIN, G ;
KALISH, R .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2106-2108
[2]   ELECTRICAL CHARACTERISTICS OF SCHOTTKY DIODES FABRICATED USING PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS [J].
GILDENBLAT, GS ;
GROT, SA ;
WRONSKI, CR ;
BADZIAN, AR ;
BADZIAN, T ;
MESSIER, R .
APPLIED PHYSICS LETTERS, 1988, 53 (07) :586-588
[3]   THE EFFECT OF SURFACE-TREATMENT ON THE ELECTRICAL-PROPERTIES OF METAL CONTACTS TO BORON-DOPED HOMOEPITAXIAL DIAMOND FILM [J].
GROT, SA ;
GILDENBLAT, GS ;
HATFIELD, CW ;
WRONSKI, CR ;
BADZIAN, AR ;
BADZIAN, T ;
MESSIER, R .
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) :100-102
[4]   ELECTRICAL-PROPERTIES OF SELECTIVELY GROWN HOMOEPITAXIAL DIAMOND FILMS [J].
GROT, SA ;
HATFIELD, CW ;
GILDENBLAT, GS ;
BADZIAN, AR ;
BADZIAN, T .
APPLIED PHYSICS LETTERS, 1991, 58 (14) :1542-1544
[5]   COMPARATIVE HALL MOBILITIES OF ION-IMPLANTED BORON AND IMPLANTED CARBON PLUS BORON IN INSULATING DIAMOND [J].
HEWETT, CA ;
DELAHOUSSAYE, PR ;
ROSER, M ;
ZEIDLER, JR ;
WILSON, RG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (10) :2977-2979
[6]   ELECTRIC FIELD-DEPENDENT CONDUCTIVITY OF POLYCRYSTALLINE DIAMOND THIN-FILMS [J].
HUANG, BR ;
REINHARD, DK .
APPLIED PHYSICS LETTERS, 1991, 59 (12) :1494-1496
[7]   POLYCRYSTALLINE DIAMOND HYDROGENATED AMORPHOUS-SILICON P-N HETEROJUNCTION [J].
KIYOTA, H ;
YONEDA, M ;
IZUMIYA, H ;
OKUSHI, H ;
OKANO, K ;
KUROSU, T ;
IIDA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (4A) :L388-L391
[8]   ELECTRICAL-CONDUCTION IN UNDOPED DIAMOND FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].
MUTO, Y ;
SUGINO, T ;
SHIRAFUJI, J ;
KOBASHI, K .
APPLIED PHYSICS LETTERS, 1991, 59 (07) :843-845
[9]   FREQUENCY-DEPENDENT CONDUCTIVITY IN POLYCRYSTALLINE CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS [J].
MUTO, Y ;
SUGINO, T ;
KOBASHI, K ;
SHIRAFUJI, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (1A-B) :L4-L6
[10]   MATERIAL AND ELECTRICAL CHARACTERIZATION OF POLYCRYSTALLINE BORON-DOPED DIAMOND FILMS GROWN BY MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION [J].
NISHIMURA, K ;
DAS, K ;
GLASS, JT .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3142-3148
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