TUNNELING CONDUCTANCE BETWEEN PARALLEL 2-DIMENSIONAL ELECTRON-SYSTEMS

被引:77
|
作者
ZHENG, L
MACDONALD, AH
机构
[1] Department of Physics, Indiana University, Bloomington
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 16期
关键词
D O I
10.1103/PhysRevB.47.10619
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We derive and evaluate expressions for the low-temperature dc equilibrium tunneling conductance between parallel two-dimensional electron systems. Our theory is based on a linear-response formalism and on impurity-averaged perturbation theory. The disorder broadening of features in the dependence of tunneling conductance on sheet densities and in-plane magnetic-field strengths is influenced both by the finite lifetime of electrons within the wells and by momentum-nonconserving tunneling events. Disorder vertex corrections are important only for weak in-plane magnetic fields and strong interwell impurity-potential correlations. We comment, on the basis of our results, on the possibility of using tunneling measurements to determine the lifetime of electrons in the quantum wells.
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页码:10619 / 10624
页数:6
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