OBSERVATION OF EXIT SURFACE SPUTTERING IN TIO2 USING BIASED SECONDARY-ELECTRON IMAGING

被引：28

作者：

CROZIER, PA ^{[1
]}

MCCARTNEY, MR ^{[1
]}

SMITH, DJ ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,CTR SOLID STATE SCI,TEMPE,AZ 85287

来源：

SURFACE SCIENCE | 1990年 / 237卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0039-6028(90)90534-F

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A dedicated ultra-high-vacuum 100 kV scanning transmission electron microscope has been used to characterize the electron-beam-induced damage which occurs on the surfaces of rutile crystals as a result of extensive electron irradiation. Biased secondary electron images from the entrance and exit surfaces indicate that the latter surface is damaged at a substantially greater rate than the former. It is concluded that knock-on collisions play an important role in the observed exit surface sputtering. © 1990.

引用

页码：232 / 240

页数：9

共 27 条

[1]

[Anonymous], 1985, SPRINGER SERIES OPTI

[2] ELECTRON ENERGY-LOSS SPECTROSCOPY STUDIES OF NANOMETER-SCALE STRUCTURES IN ALUMINA PRODUCED BY INTENSE ELECTRON-BEAM IRRADIATION [J].

BERGER, SD ;

SALISBURY, IG ;

MILNE, RH ;

IMESON, D ;

HUMPHREYS, CJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (03) :341-358

[3] RADIATION-DAMAGE IN TIOX AT HIGH-CURRENT DENSITY [J].

BERGER, SD ;

MACAULAY, JM ;

BROWN, LM .

PHILOSOPHICAL MAGAZINE LETTERS, 1987, 56 (05) :179-185

[4]

BRADLEY CR, 1988, ANL8848 REP

[5] ELECTRON-IRRADIATION DAMAGE IN OXIDES [J].

BUCKETT, MI ;

STRANE, J ;

LUZZI, DE ;

ZHANG, JP ;

WESSELS, BW ;

MARKS, LD .

ULTRAMICROSCOPY, 1989, 29 (1-4) :217-227

[6]

BULLOUGH TJ, 1990, I PHYSICS C SERIES, V98, P267

[7] SPUTTERING IN HIGH-VOLTAGE ELECTRON-MICROSCOPE [J].

CHERNS, D ;

MINTER, FJ ;

NELSON, RS .

NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F) :369-376

[8]

CROZIER PA, 1989, 47TH P ANN M EL MICR, P86

[9]

CROZIER PA, 1984, ANAL ELECTRON MICROS, P79

[10]

DEVENISH RW, 1990, I PHYS C SER, V98, P215

← 1 2 3 →