LOW-TEMPERATURE CLEANING OF GAAS SUBSTRATE BY ATOMIC-HYDROGEN IRRADIATION

被引：160
作者：
SUGAYA, T
KAWABE, M
机构：
[1] Institute of Materials Science, University of Tsukuba, Ibaraki, 305, Tsukuba
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 3A期
关键词：
LOW-TEMPERATURE CLEANING; GAAS; ATOMIC HYDROGEN; RHEED; AES;
D O I：
10.1143/JJAP.30.L402
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-temperature cleaning of GaAs substrate by atomic hydrogen irradiation has been demonstrated. Atomic hydrogen was provided by dissociation of hydrogen gas, which was carried out in a simple cracking cell with a 1500-degrees-C tungsten filament. Auger electron spectroscopy showed that carbon was removed at 200-degrees-C and oxygen was removed at 400-degrees-C by 30-min atomic hydrogen irradiation. The surface cleaning of GaAs was confirmed by the change of RHEED pattern from halo to streak after the hydrogen irradiation.
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页码：L402 / L404
页数：3
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