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- [1] MAGNETRON ION ETCHING WITH CF4 BASED PLASMAS - EFFECTS OF MAGNETIC-FIELD ON PLASMA CHEMISTRYJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (03): : 542 - 546BRIGHT, AAKAUSHIK, S
- [2] MODELING OF SILICON ETCHING IN CF4/O2 AND CF4/H2 PLASMASJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (07) : 2280 - 2290VENKATESAN, SPTRACHTENBERG, IEDGAR, TF
- [3] EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SI AND SIO2 IN CF4JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 449 - 449EPHRATH, LM
- [4] COMPARISON OF THE DAMAGE AND CONTAMINATION PRODUCED BY CF4 AND CF4/H2 REACTIVE ION ETCHING - THE ROLE OF HYDROGENAPPLIED PHYSICS LETTERS, 1986, 48 (17) : 1147 - 1149MU, XCFONASH, SJROHATGI, ARIEGER, J
- [5] HOLLOW-CATHODE ETCHING OF SI AND SIO2 USING CF4 AND H2JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (05) : 1447 - 1449FORTUNOWILTSHIRE, GOEHRLEIN, GS
- [6] Simulation of Si and SiO2 etching in CF4 plasmaVACUUM, 2008, 82 (11) : 1191 - 1193Knizikevicius, R.
- [7] FEATURES OF SiO2 REACTIVE-ION ETCHING KINETICS IN CF4IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA, 2020, 63 (09): : 21 - 27Efremov, Alexander M.Sobolev, Alexander M.Kwon, Kwang-Ho
- [8] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMASJOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 333 - 333MOGAB, CJADAMS, ACFLAMM, DL
- [9] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMASJOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803MOGAB, CJADAMS, ACFLAMM, DL
- [10] Measurements of CF2 radicals in CF4 and CF4/H2 electron cyclotron resonance plasmasJOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 43 (04) : 529 - 533Choi, WSYoo, YSPark, CW