MODULATION OF ROOM-TEMPERATURE GAAS LASERS AT X-BAND FREQUENCIES

被引：4

作者：

LAKSHMINARAYANA, MR

HUNSPERGER, RG

PARTAIN, LD

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 19期

关键词：

D O I：

10.1049/el:19780430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：640 / 641

页数：2

共 6 条

[1] DIRECT MODULATION OF DOUBLE-HETEROSTRUCTURE LASERS AT RATES UP TO 1 GBIT-S [J].

CHOWN, M ;

GOODWIN, AR ;

LOVELACE, DF ;

THOMPSON, GH ;

SELWAY, PR .

ELECTRONICS LETTERS, 1973, 9 (02) :34-36

[2] MICROWAVE MODULATION OF GAAS INJECTION LASER [J].

GOLDSTEIN, BS ;

WELCH, JD .

PROCEEDINGS OF THE IEEE, 1964, 52 (06) :715-&

[3] X-BAND MODULATION OF GAAS LASERS [J].

GOLDSTEIN, BS ;

WEIGAND, RM .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (02) :195-+

[4] RECENT PROGRESS IN SEMICONDUCTOR LASERS - CW GAAS LASERS ARE NOW READY FOR NEW APPLICATIONS [J].

HAYASHI, I .

APPLIED PHYSICS, 1974, 5 (01) :25-36

[5] AMPLITUDE MODULATION OF DIODE LASER LIGHT IN MILLIMETER-WAVE REGION [J].

TAKAMIYA, S ;

KITASAWA, F ;

NISHIZAW.JI .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (01) :135-&

[6] DIRECT MODULATION OF A DOUBLE-HETEROSTRUCTURE LASER USING A SCHOTTKY-BARRIER-GATE GUNN-EFFECT DIGITAL DEVICE [J].

YANAI, H ;

YANO, M ;

KAMIYA, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :519-524

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