OPTICAL AND ELECTRICAL-PROPERTIES OF PROTON-IMPLANTED AMORPHOUS SIO2, GEO2-SIO2, MGO-P2O5 AND NANOCRYSTALLINE MGIN2O4 - NOVEL MATERIALS BY PROTON IMPLANTATION

The optical and electrical properties of proton-implanted SiO2, GeO2-SiO2, MgO-P2O5 glasses and nanocrystalline MgIn2O4 (spinel-type structure) films were examined and several drastic changes in them were observed. The results obtained are summarized as follows. (1) Fast proton conduction (conductivity at 300 K = similar to 10(-5) S cm(-1)) was obtained in Mg (PO3), glasses implanted with H+ ions to a fluence of 10(18) cm(-2). (2) Nanocrystalline Ge colloid particles were created by implantation of H+ ions into 1GeO(2)-9SiO(2) glasses without post heat treatment. (3) Electronic conductivities in MgIn2O4 sputter-deposited films at 300 K increased from 10(-7) S cm(-1) to 1.5 X 10(1) S cm(-1) on implantation of Hf to a fluence of 2 X 10(16) Cm-2. (4) Peroxy radicals in SiO2 glasses were created primarily by electronic excitation with 1.5 MeV H+ ions.