CHARACTERIZATION OF BSO CRYSTALS - A PRELIMINARY-STUDY

被引：1
作者：
MARTINEZ, J
GONZALEZMANAS, M
CABALLERO, MA
DIEGUEZ, E
CAPELLE, B
机构：
[1] UAM,FAC CIENCIAS,DPTO FIS APLICADA,E-28049 CANTO BLANCO,SPAIN
[2] UNIV P & M CURIE,MINERAL CRISTALLOG LAB,CNRS,UA009,F-75252 PARIS 05,FRANCE
[3] UNIV PARIS 07,MINERAL CRISTALLOG LAB,CNRS,UA 009,F-75252 PARIS 05,FRANCE
来源：
JOURNAL DE PHYSIQUE IV | 1994年 / 4卷 / C2期
关键词：
D O I：
10.1051/jp4:1994219
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Czochralski grown bismuth silicon oxide (BSO) crystals have been investigated by mean of synchrotron X-ray topography in order to study the quality of the crystals obtained. High quality single crystals can be obtained under conditions rather deviated from the equilibrium. The first results correlating the defects observed with the type of the interface are reported.
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页码：169 / 172
页数：4
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