THE EFFECT OF FREQUENCY AND TEMPERATURE ON OUTPUT CONDUCTANCE OF GAAS-FETS

被引：0
作者：
TELLEZ, JR
STOTHARD, BP
ALDAAS, M
机构：
来源：
MICROWAVE JOURNAL | 1995年 / 38卷 / 08期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs MESFET device measurements demonstrate that differences between the static and pulsed IV characteristics do not arise entirely from self-heating effects. The results show that these differences can occur from frequency dispersion effects. The presented data show the relationship between temperature, bias and frequency.
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页码：88 / &
相关论文
共 9 条
[1]   MODELING OF FREQUENCY AND TEMPERATURE EFFECTS IN GAAS-MESFETS [J].
CANFIELD, PC ;
LAM, SCF ;
ALLSTOT, DJ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1990, 25 (01) :299-306
[2]  
COLIS JM, 1990, IEEE T EDUC, V37, P1217
[3]  
Fernandez T., 1993, 23rd European Microwave Conference Proceedings, P494, DOI 10.1109/EUMA.1993.336604
[4]  
LAGOWSKI J, 1984, 3RD P SEM 3 5 MAT C, P222
[5]   MODELING TEMPERATURE EFFECTS IN THE DC IV CHARACTERISTICS OF GAAS-MESFETS [J].
SELMI, L ;
RICCO, B .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (02) :273-277
[6]   COMPARISON OF NONLINEAR MESFET MODELS FOR WIDE-BAND CIRCUIT-DESIGN [J].
TELLEZ, JR ;
ALDAAS, M ;
MEZHER, KA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) :288-293
[7]  
TELLEZ JR, 1994, MICROWAVE J, V37, P76
[8]  
TELLEZ JR, 1993, IEEE T EDUC, V40, P1730
[9]  
TELLEZ JR, 1992, IEE P G, V139, P325
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