PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF C-AXIS ORIENTED AND EPITAXIAL-FILMS OF ZNO AT LOW SUBSTRATE TEMPERATURES

被引：40

作者：

SHIOSAKI, T

YAMAMOTO, T

YAGI, M

KAWABATA, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 05期

关键词：

D O I：

10.1063/1.92751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：399 / 401

页数：3

共 9 条

[1] HIGHLY ORIENTED ZINC-OXIDE FILMS GROWN BY THE OXIDATION OF DIETHYLZINC [J].

GHANDHI, SK ;

FIELD, RJ ;

SHEALY, JR .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :449-451

[2]

HICKERNELL FS, 1980, P IEEE ULTRASONICS S, P785

[3] EPITAXIAL-GROWTH OF ZNO FILMS BY VAPOR TRANSPORT IN AN OPEN TUBE SYSTEM [J].

KASUGA, M ;

ISHIHARA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (09) :1835-1836

[4] RF DIODE SPUTTERED ZNO TRANSDUCERS [J].

LARSON, JD ;

WINSLOW, DK ;

ZITELLI, LT .

IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1972, SU19 (01) :18-&

[5]

LAW CK, 1980, J ELECTROCHEM SOC, V127, P1843

[6] CHEMICAL VAPOR-DEPOSITION OF SINGLE-CRYSTALLINE ZNO FILM WITH SMOOTH SURFACE ON INTERMEDIATELY SPUTTERED ZNO THIN-FILM ON SAPPHIRE [J].

OHNISHI, S ;

HIROKAWA, Y ;

SHIOSAKI, T ;

KAWABATA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (05) :773-778

[7] OPTICAL-PROPERTIES OF SINGLE-CRYSTALLINE ZNO FILM SMOOTHLY CHEMICAL-VAPOR DEPOSITED ON INTERMEDIATELY SPUTTERED THIN ZNO FILM ON SAPPHIRE [J].

SHIOSAKI, T ;

OHNISHI, S ;

KAWABATA, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3113-3117

[8]

SHIOSAKI T, 1978, P IEEE ULTRASON S, P100

[9] CHEMICAL VAPOR-DEPOSITION OF ZNO EPITAXIAL-FILMS ON SAPPHIRE [J].

TIKU, SK ;

LAU, CK ;

LAKIN, KM .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :318-320

← 1 →