OPTOELECTRONIC INTEGRATED-CIRCUITS

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MATSUEDA, H
TANAKA, TP
NAKAMURA, M
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TM [电工技术]; TN [电子技术、通信技术];
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页码:231 / 284
页数:54
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[21]  
HAYASHI I, 1983, 4TH IOOC TOK, P170
[22]   INTEGRATED QUANTUM-WELL-LASER TRANSMITTER COMPATIBLE WITH ION-IMPLANTED GAAS INTEGRATED-CIRCUITS [J].
HONG, CS ;
KASEMSET, D ;
KIM, ME ;
MILANO, RA .
ELECTRONICS LETTERS, 1984, 20 (18) :733-735
[23]   400 MBIT-S TRANSMISSION EXPERIMENT USING 2 MONOLITHIC OPTOELECTRONIC CHIPS [J].
HORIMATSU, T ;
IWAMA, T ;
OIKAWA, Y ;
TOUGE, T ;
WADA, O ;
NAKAGAMI, T .
ELECTRONICS LETTERS, 1985, 21 (08) :319-321
[24]   ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS/GAAS SURFACE EMITTING JUNCTION LASER [J].
IGA, K ;
ISHIKAWA, S ;
OHKOUCHI, S ;
NISHIMURA, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :663-668
[25]  
INOUE K, 1983, 4TH INT C INT OPT OP, P186
[26]   MONOLITHIC INTEGRATION OF A METAL-SEMICONDUCTOR METAL PHOTODIODE AND A GAAS PREAMPLIFIER [J].
ITO, M ;
WADA, O ;
NAKAI, K ;
SAKURAI, T .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :531-532
[27]   GIGABIT PER 2ND OPERATION BY MONOLITHICALLY INTEGRATED INGAASP/INP LD-FET [J].
KASAHARA, K ;
HAYASHI, J ;
NOMURA, H .
ELECTRONICS LETTERS, 1984, 20 (15) :618-619
[28]   MONOLITHICALLY INTEGRATED IN0.53GA0.47AS-PIN/INP-MISFET PHOTORECEIVER [J].
KASAHARA, K ;
HAYASHI, J ;
MAKITA, K ;
TAGUCHI, K ;
SUZUKI, A ;
NOMURA, H ;
MATUSHITA, S .
ELECTRONICS LETTERS, 1984, 20 (08) :314-315
[29]   A MONOLITHIC INTEGRATION OF GAAS-GAAIAS BIPOLAR-TRANSISTOR AND HETEROSTRUCTURE LASER [J].
KATZ, J ;
BARCHAIM, N ;
CHEN, PC ;
MARGALIT, S ;
URY, I ;
WILT, D ;
YUST, M ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1980, 37 (02) :211-213
[30]   GAAS/GAALAS SELECTIVE MOCVD EPITAXY AND PLANAR ION-IMPLANTATION TECHNIQUE FOR COMPLEX INTEGRATED OPTOELECTRONIC CIRCUIT APPLICATIONS [J].
KIM, ME ;
HONG, CS ;
KASEMSET, D ;
MILANO, RA .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :306-309