PREPARATION OF SINGLE PHASE GALLIUM NITRIDE FROM SINGLE CRYSTAL GALLIUM ARSENIDE

被引：17

作者：

ISHERWOOD, BJ

WICKENDEN, DK

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1970年 / 5卷 / 10期

关键词：

D O I：

10.1007/BF00574858

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：869 / +

页数：1

共 11 条

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[2] GALLIUM NITRIDE FORMED BY VAPOUR DEPOSITION AND BY CONVERSION FROM GALLIUM ARSENIDE [J].

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ISHERWOOD, BJ ;

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JOURNAL OF MATERIALS SCIENCE, 1970, 5 (04) :308-+

[3]

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[4] PREPARATION, STABILITY, AND LUMINESCENCE OF GALLIUM NITRIDE [J].

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BINKOWSKI, BB .

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[5] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].

MARUSKA, HP ;

TIETJEN, JJ .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&

[6] HIGH-TEMPERATURE OXIDATION AND VACUUM DISSOCIATION STUDIES ON THE A(III) AND B(III)BAR SURFACES OF GALLIUM ARSENIDE [J].

MILLER, DP ;

HARPER, JG ;

PERRY, TR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (12) :1123-1126

[7] THERMAL OXIDATION OF GAAS [J].

MINDEN, HT .

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[8]

MINONOV KE, 1969, IZVEST SIB OTB AK KN, V70

[9] ON THE POSSIBILITY OF SUPERCONDUCTION IN GAN [J].

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BERBEN, TJ .

PHYSICS LETTERS, 1964, 12 (03) :167-167

[10] OXIDATION OF GAP AND GAAS [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (06) :540-+

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