THE CHANNELING OF SCATTERED RECOILS IN A SILICON SINGLE-CRYSTAL

被引：0

作者：

KARAMYAN, SA

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1989年 / 110卷 / 1-2期

关键词：

D O I：

10.1080/10420158908214189

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：171 / 171

页数：1

共 50 条

[1] ARSENIC ION CHANNELING THROUGH SINGLE-CRYSTAL SILICON
WADA, Y
NISHIMATSU, S
HASHIMOTO, N
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 206 - 210
[2] CRITICAL ANGLES FOR CHANNELING OF BORON IONS IMPLANTED INTO SINGLE-CRYSTAL SILICON
PARK, C
KLEIN, KM
TASCH, AF
ZIEGLER, JF
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (07) : 2107 - 2115
[3] ELECTRON BEAM CHANNELING IN SINGLE-CRYSTAL SILICON BY SCANNING ELECTRON MICROSCOPY
WOLF, ED
EVERHART, TE
APPLIED PHYSICS LETTERS, 1969, 14 (10) : 299 - &
[4] INFLUENCE OF MECHANICAL DEFORMATION ON ION-CHANNELING YIELDS IN SINGLE-CRYSTAL SILICON
BORDERS, JA
ARNOLD, GW
WHAN, RE
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03): : 287 - &
[5] TRANSPARENCY OSCILLATIONS OF A SILICON SINGLE-CRYSTAL IN PASSING FROM AXIAL TO PLANAR CHANNELING
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[6] SINGLE-CRYSTAL SPUTTERING INCLUDING CHANNELING PHENOMENON
ONDERDELINDEN, D
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 739 - +
[7] DEPOSITION OF SINGLE-CRYSTAL SILICON FILMS ON COLD SINGLE-CRYSTAL SILICON SUBSTRATES
AISENBER.S
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1968, 5 (05): : 172 - &
[8] CHANNELING OF PHOSPHORUS IONS IN SINGLE CRYSTAL SILICON
REDDI, VGK
SANSBURY, JD
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (08): : 835 - &
[9] CHANNELING EFFECT AT PROTON REFLECTION BY SINGLE-CRYSTAL SURFACE
TARATIN, AM
VOROBEV, SA
FIZIKA TVERDOGO TELA, 1979, 21 (08): : 2223 - 2228
[10] EFFECT OF PLANE CHANNELING OF FAST ELECTRONS IN SINGLE-CRYSTAL
BABUDAEV, AY
VOROBEV, SA
KAPLIN, VV
PLOTNIKOV, SV
POPOV, DE
FIZIKA TVERDOGO TELA, 1976, 18 (10): : 3131 - 3133

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