INTEGRATED INP/GAINAS HETEROJUNCTION BIPOLAR PHOTORECEIVER

被引：20
作者：
CHANDRASEKHAR, S
CAMPBELL, JC
DENTAI, AG
JOYNER, CH
QUA, GJ
GNAUCK, AH
FEUER, MD
机构：
[1] AT&T Bell Lab, United States
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 23期
关键词：
Optoelectronic Devices - Semiconducting Indium Compounds - Signal Receivers - Transistors; Bipolar;
D O I：
10.1049/el:19880986
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report an integrated photodetector-preamplifier circuit implemented with InP/GaInAs heterojunction bipolar transistors. The circuit consists of a three-terminal phototransistor, three bipolar transistors and three resistors. A receiver sensitivity of -26 dbm at 100 Mbit/s has been achieved.
引用
收藏
页码：1443 / 1445
页数：3
相关论文
共 6 条
[1]   SMALL-AREA HIGH-SPEED IN P-INGAAS PHOTO-TRANSISTOR [J].
CAMPBELL, JC ;
BURRUS, CA ;
DENTAI, AG ;
OGAWA, K .
APPLIED PHYSICS LETTERS, 1981, 39 (10) :820-821
[2]  
Hirano M., 1987, Optoelectronics - Devices and Technologies, V2, P137
[3]  
KASPER B, 1988, OPTICAL FIBER TELECO, V2
[4]   HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].
NOTTENBURG, RN ;
BISCHOFF, JC ;
PANISH, MB ;
TEMKIN, H .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) :282-284
[5]   INGAAS/INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH NEAR-IDEAL BETA-VERSUS IC CHARACTERISTIC [J].
NOTTENBURG, RN ;
TEMKIN, H ;
PANISH, MB ;
BHAT, R ;
BISCHOFF, JC .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) :643-645
[6]   MONOLITHIC INTEGRATED PHOTORECEIVER IMPLEMENTED WITH GAAS/GAAIAS HETEROJUNCTION BIPOLAR PHOTOTRANSISTOR AND TRANSISTORS [J].
WANG, H ;
ANKRI, D .
ELECTRONICS LETTERS, 1986, 22 (07) :391-393
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