PHOTOEMISSION-STUDY OF OXYGEN-ADSORPTION ON (001) SILICON-CARBIDE SURFACES

被引:68
作者
BERMUDEZ, VM
机构
关键词
D O I
10.1063/1.343589
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:6084 / 6092
页数:9
相关论文
共 43 条
[1]   MNDO ANALYSIS OF THE OXIDIZED DIAMOND(100) SURFACE [J].
BADZIAG, P ;
VERWOERD, WS .
SURFACE SCIENCE, 1987, 183 (03) :469-483
[2]   GROWTH AND STRUCTURE OF ALUMINUM FILMS ON (001) SILICON-CARBIDE [J].
BERMUDEZ, VM .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) :4951-4959
[3]   CHEMICAL-STRUCTURE OF ULTRATHIN THERMALLY GROWN OXIDES ON A SI(100)-WAFER USING CORE LEVEL PHOTOEMISSION [J].
BRAUN, W ;
KUHLENBECK, H .
SURFACE SCIENCE, 1987, 180 (01) :279-288
[4]   CORE-LEVEL BINDING-ENERGY SHIFTS DUE TO RECONSTRUCTION ON THE SI(111) 2X1 SURFACE [J].
BRENNAN, S ;
STOHR, J ;
JAEGER, R ;
ROWE, JE .
PHYSICAL REVIEW LETTERS, 1980, 45 (17) :1414-1418
[5]  
BRIGGS D, 1983, PRACTICAL SURFACE AN
[6]   A STUDY OF NATIVE OXIDES OF BETA-SIC USING AUGER-ELECTRON SPECTROSCOPY [J].
CHAUDHRY, MI .
JOURNAL OF MATERIALS RESEARCH, 1989, 4 (02) :404-407
[7]  
Cotton F.A., 1962, ADV INORGANIC CHEM
[8]  
DERRY TE, 1988, STRUCTURE SURFACES, V2, P384
[9]  
FITZER E, 1973, SILICON CARBIDE 1973, P320
[10]   THERMAL-OXIDATION OF 3C SILICON-CARBIDE SINGLE-CRYSTAL LAYERS ON SILICON [J].
FUNG, CD ;
KOPANSKI, JJ .
APPLIED PHYSICS LETTERS, 1984, 45 (07) :757-759