HIGH ACCEPTOR PRODUCTION-RATE IN ELECTRON-IRRADIATED N-TYPE GAAS - IMPACT ON DEFECT MODELS

被引：12
作者：
LOOK, DC
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 11期
关键词：
D O I：
10.1063/1.98831
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：843 / 845
页数：3
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