300 MW OPERATION OF A SURFACE-EMITTING PHASE-LOCKED ARRAY OF DIODE-LASERS

被引：10

作者：

PURETZ, J ^{[1
]}

DEFREEZ, RK ^{[1
]}

ELLIOTT, RA ^{[1
]}

ORLOFF, J ^{[1
]}

PAOLI, TL ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 03期

关键词：

D O I：

10.1049/el:19870092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：130 / 131

页数：2

共 11 条

[1] CW OPERATION OF WIDELY AND CONTINUOUSLY TUNABLE MICROMACHINED-COUPLED-CAVITY DIODE-LASERS [J].

DEFREEZ, RK ;

PURETZ, J ;

ELLIOTT, RA ;

ORLOFF, J ;

SWANSON, LW .

ELECTRONICS LETTERS, 1986, 22 (17) :919-921

[2]

DEFREEZ RK, 1986, 1986 ANN M OPT SOC A, P99

[3] SURFACE-EMITTING 2ND-ORDER DISTRIBUTED BRAGG REFLECTOR LASER WITH DYNAMIC WAVELENGTH STABILIZATION AND FAR-FIELD ANGLE OF 0.25-DEGREES [J].

EVANS, GA ;

HAMMER, JM ;

CARLSON, NW ;

ELIA, FR ;

JAMES, EA ;

KIRK, JB .

APPLIED PHYSICS LETTERS, 1986, 49 (06) :314-315

[4] MICROMACHINING OF INTEGRATED OPTICAL STRUCTURES [J].

HARRIOTT, LR ;

SCOTTI, RE ;

CUMMINGS, KD ;

AMBROSE, AF .

APPLIED PHYSICS LETTERS, 1986, 48 (25) :1704-1706

[5] ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS/GAAS SURFACE EMITTING JUNCTION LASER [J].

IGA, K ;

ISHIKAWA, S ;

OHKOUCHI, S ;

NISHIMURA, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :663-668

[6] SURFACE-EMITTING GAINASP-INP LASER WITH LOW THRESHOLD CURRENT AND HIGH-EFFICIENCY [J].

LIAU, ZL ;

WALPOLE, JN .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :115-117

[7] FOCUSED-ION-BEAM MICROMACHINED ALGAAS SEMICONDUCTOR-LASER MIRRORS [J].

PURETZ, J ;

DEFREEZ, RK ;

ELLIOTT, RA ;

ORLOFF, J .

ELECTRONICS LETTERS, 1986, 22 (13) :700-702

[8] PHASE-LOCKED (GAAL)AS LASER EMITTING 1.5 W CW PER MIRROR [J].

SCIFRES, DR ;

BURNHAM, RD ;

LINDSTROM, C ;

STREIFER, W ;

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :645-647

[9] MONOLITHIC TWO-DIMENSIONAL ARRAYS OF HIGH-POWER GALNASP/INP SURFACE-EMITTING DIODE-LASERS [J].

WALPOLE, JN ;

LIAU, ZL .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1636-1638

[10] MONOLITHIC GAAS/ALGAAS DIODE-LASER DEFLECTOR DEVICES FOR LIGHT-EMISSION NORMAL TO THE SURFACE [J].

WINDHORN, TH ;

GOODHUE, WD .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1675-1677

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