XPS STUDY OF THE INTERFACE REACTIONS BETWEEN BUFFER LAYERS FOR HTSC THIN-FILMS AND SILICON

被引：47

作者：

BEHNER, H ^{[1
]}

WECKER, J ^{[1
]}

MATTHEE, T ^{[1
]}

SAMWER, K ^{[1
]}

机构：

[1] UNIV AUGSBURG,INST PHYS,W-8900 AUGSBURG,GERMANY

来源：

SURFACE AND INTERFACE ANALYSIS | 1992年 / 18卷 / 09期

关键词：

D O I：

10.1002/sia.740180909

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work we have studied the interface reactions during e-beam evaporation of yttria-stabilized zirconia (YSZ), yttria (Y2O3) and Y on Si(100) substrates by means of x-ray photoelectron spectroscopy (XPS). A deposition process was developed for the heteroepitaxial growth of YSZ and Y2O3. A high amount of metallic Zr in the YSZ vapour results in an in situ reduction of the native silicon oxide layer, allowing the growth of high-quality YSZ films even on uncleaned Si substrates. A similar in situ reduction process was achieved for the Y2O3 film growth on uncleaned substrates by a predeposition of metallic Y. The deposition of YBa2Cu3O7-delta (YBCO) films on YSZ/Y2O3/Si multilayers by dc magnetron sputtering resulted in critical current densities of the YBCO layer in excess of 2 x 10(6) A cm-2.

引用

页码：685 / 690

页数：6

共 15 条

[1]

BEHNER H, UNPUB SOLID STATE CO

[2]

BRAGINSKI AJ, 1991, FED J, V1, P18

[3]

BRIGGS D, 1990, PRACTICAL SURFACE AN

[4] REACTIONS AT THE INTERFACES OF THIN-FILMS OF Y-BA-CU-OXIDES AND ZR-OXIDES WITH SI SUBSTRATES [J].