THEORY OF THE EFFECT OF A MAGNETIC FIELD ON THE ABSORPTION EDGE IN SEMICONDUCTORS

被引：48
作者：
ELLIOTT, RJ
MCLEAN, TP
MACFARLANE, GG
机构：
来源：
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1958年 / 72卷 / 466期
关键词：
D O I：
10.1088/0370-1328/72/4/310
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：553 / 565
页数：13
相关论文
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