NUMERICAL-ANALYSIS OF GAAS-MESFETS WITH P-BUFFER LAYER ON SEMI-INSULATING SUBSTRATE INCLUDING DEEP TRAPS

被引：2

作者：

HORIO, K

YANAI, H

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 02期

关键词：

D O I：

10.1049/el:19890064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：86 / 88

页数：3

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